Frenkel-Kontorova model of vacancy-line interactions on Ga/Si(112)

被引：46
|
作者：
Erwin, SC [1 ]
Baski, AA
Whitman, LJ
Rudd, RE
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA
[3] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
来源：
PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 09期
关键词：
D O I：
10.1103/PhysRevLett.83.1818
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We develop an exactly solvable microscopic model for analyzing the strain-mediated interaction of vacancy lines in a pseudomorphic adsorbate system. The model is applied to Ga/Si(112) by extracting values for the microscopic parameters from total-energy calculations. The results, which are in good agreement with experimental observations, reveal an unexpectedly complex interplay between compressive and tensile strain within the mixed Ga-Si surface layer.
引用
收藏
页码：1818 / 1821
页数：4
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