Luminescence properties of a Pb2+ activated long-afterglow phosphor

被引:30
|
作者
Kuang, JY [1 ]
Liu, YL [1 ]
机构
[1] Jinan Univ, Dept Chem, Guangzhou 510632, Peoples R China
关键词
D O I
10.1149/1.2163780
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Luminescence properties of CdSiO3:Pb2+ long-afterglow phosphor, including photoluminescence, fluorescence lifetime, long-afterglow decay curve, and thermostimulated luminescence spectra, are investigated in this paper. Photoluminescence of the synthesized phosphor shows a single intense Pb2+-related broadband emission located at 498 nm. Moreover, the Pb2+-related broadband emission still exists for more than 2 h, even after the ultraviolet irradiation source has been removed. Both the fluorescence and long-afterglow decay lifetime of the Pb2+ ions contain a fast decay component and slow decay one. Thermo-stimulated luminescence curve study indicates that the incorporation of Pb2+ ions into CdSiO3 host produces two suitable dense trapping centers at 0.55 and 0.43 eV, which is the origin of the long-afterglow phenomenon in this kind of material at room temperature. This finding has enlarged the activator of the family of long-afterglow phosphors available. (c) 2006 The Electrochemical Society.
引用
收藏
页码:G245 / G247
页数:3
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