Effects of lateral overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on r-sapphire substrates

被引：2

作者：

Hong, Moon-Taek ^{[1
]}

Kim, Tae-Soo ^{[1
]}

Park, Ki-Nam ^{[1
]}

Jung, Sukkoo ^{[2
]}

Chang, Younghak ^{[2
]}

Bang, Gyu-Hyun ^{[2
]}

Kim, Hyung-Gu ^{[2
]}

Jeon, Jina ^{[2
]}

Choi, Yoon-Ho ^{[2
]}

Hwang, Sung-Min ^{[3
]}

Song, Jung-Hoon ^{[1
]}

机构：

[1] Kongju Natl Univ, Dept Phys, Kong Ju 314701, Chungnam, South Korea

[2] LG Elect Adv Inst Technol, Seoul 137724, South Korea

[3] Korea Elect Technol Inst, Songnam 463816, Gyeonggi, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 02期

关键词：

LIGHT-EMITTING-DIODES; EPITAXIAL OVERGROWTH; GAN; PHOTOLUMINESCENCE;

D O I：

10.1063/1.4774302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the effects of the patterned lateral over-growth on the residual strain in GaN templates and In incorporation in a-plane InGaN/GaN quantum wells grown on a r-sapphire substrate, by utilizing micro-photoluminescence and Raman scattering spectroscopy. Strong enhancement of emission intensity is observed from the wing area. We report a reduction in the residual strain and different In incorporation in the wing area. The InGaN quantum wells on the merged area have higher In composition with smaller residual strain of the GaN layers underneath. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4774302]

引用

页数：4

共 50 条

[21] Growth pressure dependence of optical and structural properties of a-plane InGaN/GaN multi-quantum wells on r-plane sapphire
Song, Keun-Man
Kim, Jong-Min
Shin, Chan-Soo
Hwang, Sung-Min
Seo, Yong-Gon
Kong, Bo-Hyun
Cho, Hyung-Koun
Yoon, Dae-Ho
JOURNAL OF CRYSTAL GROWTH, 2012, 339 (01) : 8 - 12
[22] Study of a-Plane GaN Epitaxial Lateral Overgrowth Using Carbonized Photoresist Mask on r-Plane Sapphire
Jang, Samseok
Lee, Dohan
Kwon, Jun-hyuck
Kim, Sang-il
Yim, So Young
Lee, Jaesang
Park, Ji Hun
Byun, Dongjin
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (11)
[23] Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
Li, Zhiwei
Wei, Hongyuan
Xu, Xiaoqing
Zhao, Guijuan
Liu, Xianglin
Yang, Shaoyan
Zhu, Qinsheng
Wang, Zhanguo
JOURNAL OF CRYSTAL GROWTH, 2012, 348 (01) : 10 - 14
[24] Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates
Seo, Yong Gon
Baik, Kwang Hyeon
Song, Hooyoung
Son, Ji-Su
Oh, Kyunghwan
Hwang, Sung-Min
OPTICS EXPRESS, 2011, 19 (14): : 12919 - 12924
[25] Blue light emitting diode fabricated on a-plane GaN film over r-sapphire substrate and on a-plane bulk GaN substrate
Naoi, Y.
Ikeda, K.
Hama, T.
Ono, K.
Choi, R.
Fukumoto, T.
Nishino, K.
Sakai, S.
Lee, S. M.
Koike, M.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07): : 2810 - +
[26] Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire
Chitnis, A
Chen, C
Adivarahan, V
Shatalov, M
Kuokstis, E
Mandavilli, V
Yang, J
Khan, MA
APPLIED PHYSICS LETTERS, 2004, 84 (18) : 3663 - 3665
[27] Optical polarization and internal quantum efficiency for InGaN quantum wells on a-plane GaN
Lin, E. Y.
Chen, C. Y.
Lay, T. S.
Peng, Z. X.
Lin, T. Y.
Wang, T. C.
Tsay, J. D.
PHYSICA B-CONDENSED MATTER, 2010, 405 (07) : 1857 - 1860
[28] Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth
Polyakov, A. Y.
Govorkov, A. V.
Smimov, N. B.
Markov, A. V.
Lee, In-Hwan
Ju, Jin-Woo
Pearton, S. J.
APPLIED PHYSICS LETTERS, 2009, 94 (14)
[29] A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
Kundys, Dmytro
Sutherland, Danny
Davies, Matthew J.
Oehler, Fabrice
Griffiths, James
Dawson, Philip
Kappers, Menno J.
Humphreys, Colin J.
Schulz, Stefan
Tang, Fengzai
Oliver, Rachel A.
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2016, 17 (01) : 736 - 743
[30] Investigation of InGaN/GaN quantum wells grown on sapphire and bulk GaN substrates
Sugahara, T
Sakai, S
Lachab, M
Fareed, RSQ
Tottori, S
Wang, T
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1999, 216 (01): : 273 - 277

← 1 2 3 4 5 →