Microscopic correspondence between Schottky-barrier height and interface morphology at thermally degraded Al/(111)Si contacts

被引：0

作者：

Miyazaki, S ^{[1
]}

Okumura, T ^{[1
]}

Miura, Y ^{[1
]}

Hirose, K ^{[1
]}

机构：

[1] NEC CO,MICROELECTR RES LABS,TSUKUBA,IBARAKI 305,JAPAN

来源：

DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1995 | 1996年 / 149卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have measured microscopic distribution of Schottky barrier heights (SBHs) at epitaxial-Al/n-Si(111) interfaces by using scanning internal-photoemission microscopy. The SBH distribution at the interface was homogeneous in the as-deposited state. After annealing, the inhomogeneity of SBH arose and it caused the discrepancy between two SBHs determined by I-V and C-V methods. The thickness distribution of recrystallized p(+)-Si layer, formed during annealing process, was responsible for the distribution of SBH.

引用

页码：307 / 312

页数：6

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