Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM

被引：34
|
作者：
Kauko, H. [1 ]
Grieb, T. [2 ]
Bjorge, R. [1 ]
Schowalter, M. [2 ]
Munshi, A. M. [3 ]
Weman, H. [3 ]
Rosenauer, A. [2 ]
van Helvoort, A. T. J. [1 ]
机构：
[1] Norwegian Univ Sci & Technol NTNU, Dept Phys, Trondheim, Norway
[2] Univ Bremen, Inst Festkorperphys, D-28359 Bremen, Germany
[3] Norwegian Univ Sci & Technol NTNU, Dept Elect & Telecommun, Trondheim, Norway
来源：
MICRON | 2013年 / 44卷
关键词：
HAADF-STEM; Quantitative microscopy; Nanowires; Heterostructures; GaAsSb; TRANSMISSION-ELECTRON-MICROSCOPY; DARK-FIELD IMAGES; III-V; SEMICONDUCTORS; CONTRAST; ALLOYS;
D O I：
10.1016/j.micron.2012.07.002
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
The Sb concentration in axial GaAs1-xSbx inserts of otherwise pure GaAs nanowires has been investigated with quantitative high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The Sb concentration was quantified by comparing the experimental image intensities normalized to the incident beam intensity with intensities simulated with a frozen lattice multislice approach. Including static atomic displacements in the simulations was found to be crucial for correct compositional analysis of GaAs1-xSbx. HAADF intensities of individual nanowires were analysed both across the nanowires, exploiting their hexagonal cross-sectional shape, and along the evenly thick central part of the nanowires. From the cross-sectional intensity profiles, a decrease in the Sb concentration towards the nanowire outer surfaces was found. The longitudinal intensity profiles revealed a gradual build-up of Sb in the insert. The decrease of the Sb concentration towards the upper interface was either gradual or abrupt, depending on the growth routine chosen. The compositional analysis with quantitative HAADF-STEM was verified by energy dispersive X-ray spectroscopy. (c) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：254 / 260
页数：7
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