Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2

被引：24

作者：

Afanas'ev, V. V. ^{[1
]}

Badylevich, M. ^{[1
]}

Stesmans, A. ^{[1
]}

Brammertz, G. ^{[2
]}

Delabie, A. ^{[2
]}

Sionke, S. ^{[2
]}

O'Mahony, A. ^{[3
]}

Povey, I. M. ^{[3
]}

Pemble, M. E. ^{[3
]}

O'Connor, E. ^{[3
]}

Hurley, P. K. ^{[3
]}

Newcomb, S. B. ^{[4
]}

机构：

[1] Univ Louvain, Dept Phys, B-3001 Louvain, Belgium

[2] IMEC, B-3001 Louvain, Belgium

[3] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

[4] Glebe Sci Ltd, Newport, Tipperary, Ireland

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 21期

关键词：

alumina; atomic layer deposition; charge injection; gallium arsenide; hafnium compounds; high-k dielectric thin films; III-V semiconductors; oxidation; photoconductivity; photoemission; semiconductor-insulator boundaries;

D O I：

10.1063/1.3021374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Band alignment at the interfaces of (100)GaAs with Al2O3 and HfO2 grown using atomic layer deposition is determined using internal photoemission and photoconductivity measurements. Though the inferred conduction and valence band offsets for both insulators were found to be close to or larger than 2 eV, the interlayer grown by concomitant oxidation of GaAs reduces the barrier for electrons by approximately 1 eV. The latter may pose significant problems associated with electron injection from GaAs into the oxide.

引用

页数：3

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