Effects of scattering on two-dimensional electron gases in InGaAs/InAlAs quantum wells

被引：2
|
作者：
Zhou, W. Z. [1 ,2 ,3 ]
Wang, W. [1 ]
Chang, Z. G. [1 ]
Wang, Y. Z. [1 ]
Lan, Z. Q. [1 ]
Shang, L. Y. [2 ]
Lin, T. [3 ]
Cui, L. J. [4 ]
Zeng, Y. P. [4 ]
Li, G. X. [1 ]
Yu, C. H. [5 ]
Guo, J. [1 ]
Chu, J. H. [2 ,3 ]
机构：
[1] Guangxi Univ, Coll Phys Sci & Technol, Nanning 530004, Guangxi, Peoples R China
[2] E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[4] Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China
[5] Nantong Univ, Jiangsu Key Lab ASCI Design, Nantong 226019, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 02期
基金：
中国国家自然科学基金;
关键词：
MOBILITY TRANSISTORS; HETEROSTRUCTURES; CHANNEL; HEMTS;
D O I：
10.1063/1.4737777
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of different scattering on two-dimensional electron gases (2DEGs) in lattice matched In0.53Ga0.47As/In0.52Al0.48As quantum wells with silicon delta-doped in one barrier layer have been investigated by means of magneto-transport measurements. For the studied samples, the 2DEGs have occupied two subbands. It is found that the dominant scattering mechanism is ionized impurities scattering for the two subbands' electrons. Besides the dominant scattering mechanism of ionized impurities scattering, Coulomb scattering also plays a role in scattering mechanism for both subbands. Both the transport scattering time and the quantum scattering time of the second subband are larger than those of the first subband. It is because that the electrons of the first subband are, on average, closer to the ionized impurities in the doped layer, they will be scattered more strongly than those in the second subband. Due to the electron wave functions for the second subband spread more widely in the quantum wells, the alloy disorder scattering is more important for the carriers in the second subband than that in the first subband. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737777]
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页数：7
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