Effect of oxide additives on the low-temperature sintering of dielectrics (Zn,Mg)TiO3

被引：12

作者：

Hsieh, Ming-Liang ^{[2
]}

Chen, Lih-Shan ^{[1
]}

Hsu, Hsiang-Chen ^{[3
]}

Wang, Shuming ^{[2
]}

Houng, Mau-Phon ^{[4
]}

Fu, Shen-Li ^{[1
]}

机构：

[1] I Shou Univ, Dept Elect Engn, Kaohsiung, Taiwan

[2] I Shou Univ, Dept Elect Engn, Kaohsiung, Taiwan

[3] I Shou Univ, Dept Mech Engn, Kaohsiung, Taiwan

[4] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

来源：

MATERIALS RESEARCH BULLETIN | 2008年 / 43卷 / 11期

关键词：

Ceramics; X-ray diffraction; Dielectric properties;

D O I：

10.1016/j.materresbull.2007.11.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of oxide additives on the low-temperature sintering and dielectric properties of microwave dielectrics (Zn,Mg)TiO3 have been investigated. The study showed that a small amount Of V2O5 accelerated the densification rate of (Zn,Mg)TiO3 dielectrics as compared with the other oxide additives. In addition to lower sintering temperature of zinc titanate dielectrics, the addition of V2O5 decreased the decomposition temperature of (Zn,Mg)TiO3. Additionally, the increased amount of magnesium raised both the sintering temperature and the decomposition temperature of (Zn,Mg)TiO3. Relative permittivity of (Zn,Mg)TiO3 dielectrics decreased accompanied with increase of Q x f as the amount of magnesium content increased. The temperature coefficient of resonant frequency of (Zn,Mg)TiO3 shifted to more negative values as the amount of magnesium increased. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：3122 / 3129

页数：8

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