Influence of growth temperature on order within silicon films grown by ultrahigh-vacuum evaporation on silica

被引:19
|
作者
Tay, LL [1 ]
Lockwood, DJ
Baribeau, JM
Noël, M
Zwinkels, JC
Orapunt, F
O'Leary, SK
机构
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[2] Natl Res Council Canada, Inst Natl Measurement Stand, Ottawa, ON K1A 0R6, Canada
[3] Univ Regina, Fac Engn, Regina, SK S4S 0A2, Canada
基金
加拿大创新基金会; 加拿大自然科学与工程研究理事会;
关键词
D O I
10.1063/1.2189115
中图分类号
O59 [应用物理学];
学科分类号
摘要
We study the role that the growth temperature plays in determining the amount of order present within silicon films deposited on fused silica substrates through ultrahigh-vacuum evaporation at growth temperatures ranging from 98 to 572 degrees C. Through measurements of the Raman and optical absorption spectra, we quantitatively determine how the growth temperature influences the order present within 11 such films. We employ three disparate measures of order for the purposes of this study: the breadth of the transverse-optic phonon Raman peak, this being related to the amount of short-range order present; the area under the transverse-acoustic Raman peak divided by the area under the corresponding transverse-optic peak, this being related to the amount of intermediate-range order present; and the breadth of the optical absorption tail, which is a general measure of the overall amount of order present. All three measures of order indicate a dramatic increase in the amount of order present for growth temperatures above 400 degrees C.
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页数:3
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