Influence of growth temperature on order within silicon films grown by ultrahigh-vacuum evaporation on silica

We study the role that the growth temperature plays in determining the amount of order present within silicon films deposited on fused silica substrates through ultrahigh-vacuum evaporation at growth temperatures ranging from 98 to 572 degrees C. Through measurements of the Raman and optical absorption spectra, we quantitatively determine how the growth temperature influences the order present within 11 such films. We employ three disparate measures of order for the purposes of this study: the breadth of the transverse-optic phonon Raman peak, this being related to the amount of short-range order present; the area under the transverse-acoustic Raman peak divided by the area under the corresponding transverse-optic peak, this being related to the amount of intermediate-range order present; and the breadth of the optical absorption tail, which is a general measure of the overall amount of order present. All three measures of order indicate a dramatic increase in the amount of order present for growth temperatures above 400 degrees C.