Electronic, optical and thermoelectric properties of the WS2-GaN interfaces: a DFT study

Based on the density function theory, the electronic, optical, and thermoelectric behaviors of the WS2-GaN interfaces have been investigated at threed(1) = 2.8793 angstrom,d(2) = 4.0459 angstrom, andd(3) = 6.6419 angstrom distances. All compounds have the ground state point with high hardness. The WS2-GaN interfaces for d(1)and d(3)cases are the p-type semiconductors and the other one is n-type semiconductor, with 1.82 eV, 1.95 eV, and 1.51eVband gap, respectively, with high levels density around the Fermi level. Optical properties have been approximated by the RPA, TDDFT, and BSE approximations, which the last case has better agreement with the electronic nature of these compositions. The main optical response is occurred in the 5 eV optical energy for twoxandzdirections. The optical response with BSE approximation indicates the semiconductor behavior for all three interfaces in the infrared, visible and ultra-violate edge regions. The Seebeck coefficients for thed(1)andd(3)distances show that the holes are the charge carriers and for the other one electrons. In addition, the figures of merit at lower temperatures have been shown in WS2-GaN interfaces ford(1)andd(3)having good thermoelectric efficiencies with high amount of ZT.