III-V/Si MOS Capacitor Mach-Zehnder Modulator with Low Temperature Sensitivity

被引：0
|
作者：
Hiraki, Tatsurou [1 ]
Aihara, Takuma [2 ]
Takeda, Koji [1 ]
Fujii, Takuro [1 ]
Kakitsuka, Takaaki [1 ]
Tsuchizawa, Tai [1 ]
Fukuda, Hiroshi [1 ]
Matsuo, Shinji [1 ]
机构：
[1] NTT Corp, NTT Nanophoton Ctr, NTT Device Technol Labs, Atsugi, Kanagawa, Japan
[2] NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa, Japan
来源：
2019 IEEE 16TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2019) | 2019年
关键词：
Silicon photonics; Optical modulator;
D O I：
10.1109/group4.2019.8926127
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate an ultra-high efficiency III-V/Si metal-oxide-semiconductor capacitor Mach-Zehnder modulator with low temperature sensitivity. The measured modulation efficiencies of the fabricated device are 0.08-0.11 Vcm in the C and L hand at 25-80 degrees Celsius.
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页数：2
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