Comparison of dot schottky and MHEMT diodes for 94 GHz mixer applications

被引：0

作者：

Bang, Seok Ho ^{[1
]}

Lee, Sang Jin ^{[1
]}

Lee, Mun Kyo ^{[1
]}

Ko, Dong Sik ^{[1
]}

Moon, Sung-Woon ^{[1
]}

Baek, Yong Hyun ^{[1
]}

Han, Min ^{[1
]}

Choi, Seok Gyu ^{[1
]}

Baek, Tae Jong ^{[1
]}

Jun, Byoung-Chul ^{[1
]}

Park, Dong Chul ^{[2
]}

Kim, Sam-Dong ^{[1
]}

Rhee, Jin Koo ^{[1
]}

机构：

[1] Dongguk Univ, Millimeterwave INnovat Technol Res Ctr, 26 3-Ga,Pil Dong, Seoul, South Korea

[2] Chungnam Natl Univ, Dept Radio Sci & Engn, Daejeon, South Korea

来源：

2008 GLOBAL SYMPOSIUM ON MILLIMETER WAVES | 2008年

关键词：

D O I：

10.1109/GSMM.2008.4534555

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

In this paper, we designed a dot type GaAs Schottky diode for improvement of RF characteristics. The dot type GaAs Schottky diode shows that total resistance is 18.3 Omega, ideality factor is 1.41 at the room temperature and cut-off frequency is 435 GRz. The simulation result of designed single balanced mixer structure shows a good conversion loss of 6.28 dB..

引用

页码：52 / +

页数：2

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