Tuning antiferromagnetic exchange interaction for spontaneous exchange bias in MnNiSnSi system

被引:34
|
作者
Jia, Liyun [1 ,2 ]
Shen, Jianlei [1 ]
Li, Mengmeng [1 ]
Wang, Xi [1 ]
Ma, Li [1 ]
Zhen, Congmian [1 ]
Hou, Denglu [1 ]
Liu, Enke [3 ]
Wang, Wenhong [3 ]
Wu, Guangheng [3 ]
机构
[1] Hebei Normal Univ, Dept Phys, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Hebei, Peoples R China
[2] Hebei Inst Architecture Civil Engn, Dept Math & Phys, Zhangjiakou 075000, Peoples R China
[3] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China
来源
APL MATERIALS | 2017年 / 5卷 / 12期
基金
中国国家自然科学基金;
关键词
HEUSLER ALLOYS; MAGNETORESISTANCE;
D O I
10.1063/1.5001793
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Based on almost all the data from the literature on spontaneous exchange bias (SEB), it is expected that the system will show SEB if it meets two conditions simultaneously: (i) there are the coexistence and competition of antiferromagnetic (AFM) and ferromagnetic (FM) interactions and (ii) AFM interaction should dominate but not be too strong in this competition. In order to verify this view, a systematic study on SEB has been performed in this work. Mn50Ni40Sn10 with strong FM interaction and without SEB is chosen as the mother composition, and the negative chemical pressure is introduced by the substitution of Sn by Si to enhance AFM interaction. It is found that a long-range FM ordering window is closed, and a long-range AFM ordering window is opened. As a result, SEB is triggered and a continuous tuning of the spontaneous exchange bias field (H-SEB) from 0 Oe to 1300 Oe has been realized in a Mn50Ni40Sn10-xSix system by the enhanced AFM interaction. (c) 2017 Author(s).
引用
收藏
页数:7
相关论文
共 50 条
  • [41] The structure dependence of exchange bias in ferromagnetic/antiferromagnetic bilayers
    Xiao-Yong, Xu
    Mao-Hua, Wang
    Jing-Guo, Hu
    CHINESE PHYSICS B, 2008, 17 (04) : 1443 - 1447
  • [42] Exchange bias of ferromagnetic/antiferromagnetic in FePt/FeRh bilayers
    Nam, Nguyen T.
    Lu, W.
    Suzuki, T.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)
  • [43] Ising model for exchange bias in ferromagnetic/antiferromagnetic bilayers
    Negulescu, B
    Tanasa, R
    Stancu, A
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2004, 6 (03): : 991 - 994
  • [44] Crystal Structure Manipulation of the Exchange Bias in an Antiferromagnetic Film
    Yuan, Wei
    Su, Tang
    Song, Qi
    Xing, Wenyu
    Chen, Yangyang
    Wang, Tianyu
    Zhang, Zhangyuan
    Ma, Xiumei
    Gao, Peng
    Shi, Jing
    Han, Wei
    SCIENTIFIC REPORTS, 2016, 6
  • [45] Crystal Structure Manipulation of the Exchange Bias in an Antiferromagnetic Film
    Wei Yuan
    Tang Su
    Qi Song
    Wenyu Xing
    Yangyang Chen
    Tianyu Wang
    Zhangyuan Zhang
    Xiumei Ma
    Peng Gao
    Jing Shi
    Wei Han
    Scientific Reports, 6
  • [46] Exchange bias in ferromagnetic/antiferromagnetic bilayers with imperfect interfaces
    Spray, J.
    Nowak, U.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (21) : 4536 - 4539
  • [47] Perpendicular exchange bias in antiferromagnetic-ferromagnetic nanostructures
    Sort, J
    Dieny, B
    Fraune, M
    Koenig, C
    Lunnebach, F
    Beschoten, B
    Güntherodt, G
    APPLIED PHYSICS LETTERS, 2004, 84 (18) : 3696 - 3698
  • [48] Exchange bias in ferromagnetic-antiferromagnetic submicron structures
    Manginas, G.
    Chatzichristidi, M.
    Speliotis, Th.
    Niarchos, D.
    MICROELECTRONIC ENGINEERING, 2007, 84 (5-8) : 1536 - 1539
  • [49] Role of the Antiferromagnetic Bulk Spin Structure on Exchange Bias
    Morales, R.
    Li, Zhi-Pan
    Olamit, J.
    Liu, Kai
    Alameda, J. M.
    Schuller, Ivan K.
    PHYSICAL REVIEW LETTERS, 2009, 102 (09)
  • [50] On the exchange bias in single and polycrystalline ferro/antiferromagnetic bilayers
    Li, ZJ
    Zhang, SF
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) : 7272 - 7274