Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface

被引：21
|
作者：
Hirama, Kazuyuki [1 ]
Taniyasu, Yoshitaka [1 ]
Kasu, Makoto [1 ,2 ]
机构：
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[2] Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 09期
基金：
日本学术振兴会;
关键词：
ALN; SAPPHIRE; HEMTS; FILMS;
D O I：
10.1143/JJAP.51.090114
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial growth of an AlGaN/GaN high-electron mobility trainsistor (HEMT) structure on a diamond (111) substrate was investigated. Due to the misorientation of the diamond (111) surface, the AlGaN/GaN HEMT structure showed the macro-step surface. Using diamond surfaces with two different misorientation angles (3 and 0.5 degrees), we found that the one with the small misorientation angle is effective for obtaining a flat AlGaN/GaN HEMT surface. Threading dislocation density of the AlGaN/GaN HEMT structure grown on the diamond (111) surface was evaluated from cross-sectional transmission electron microscope images. The densities of pure-screw-, pure-edge- and mixed-type threading dislocation were 0.3 x 10(9), 4.1 x 10(9), and 4.5 x 10(9) cm(-2), respectively. The AlGaN/GaN HEMT eptaxially grown on the diamond (111) substrate showed the maximum drain current of 800 mA/mm with little self-heating effect. (C) 2012 The Japan Society of Applied Physics
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页数：4
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