Coexistence of two-dimensional and three-dimensional Shubnikov-de Haas oscillations in Ar+-irradiated KTaO3

被引：46

作者：

Harashima, S. ^{[1
,2
]}

Bell, C. ^{[1
]}

Kim, M. ^{[1
,3
]}

Yajima, T. ^{[1
,3
]}

Hikita, Y. ^{[1
]}

Hwang, H. Y. ^{[1
,4
]}

机构：

[1] Stanford Inst Mat & Energy Sci, SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA

[2] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[3] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan

[4] Stanford Univ, Dept Appl Phys, Geballe Lab Adv Mat, Stanford, CA 94305 USA

来源：

PHYSICAL REVIEW B | 2013年 / 88卷 / 08期

关键词：

ELECTRON-GAS; SRTIO3; SUPERCONDUCTIVITY; SURFACE; FILMS;

D O I：

10.1103/PhysRevB.88.085102

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report electron doping in the surface vicinity of KTaO3 by inducing oxygen vacancies via Ar+ irradiation. The doped electrons have high mobility (>10(4) cm(2)/V s) at low temperatures, and exhibit Shubnikov-de Haas oscillations with both two- and three-dimensional components. A disparity of the extracted in-plane effective mass, compared to the bulk values, suggests mixing of the orbital characters. Our observations demonstrate that Ar+ irradiation serves as a flexible tool to study low-dimensional quantum transport in 5d semiconducting oxides.

引用

页数：7

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