The conductivity of graphene nanoribbons in the presence of bulk impurities and edge roughness is studied theoretically using the Boltzmann transport equation for quasi-one-dimensional systems. As the number of occupied subbands increases, the conductivity due to bulk impurities converges towards the two-dimensional case. It is shown that the dependence of the conductivity generated by edge roughness scattering depends in a distinctly different way on the sample parameters than the conductivity due to bulk scattering. The Boltzmann model furthermore predicts the amplitude of the edge-roughness-induced magnetoconductance dip as a function of the amplitude and the correlation length of the edge roughness.
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Dipartimento Matemat & Informat, Viale Andrea Doria 6, I-95125 Catania, CT, ItalyDipartimento Matemat & Informat, Viale Andrea Doria 6, I-95125 Catania, CT, Italy
Camiola, Vito Dario
Nastasi, Giovanni
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Dipartimento Matemat & Informat, Viale Andrea Doria 6, I-95125 Catania, CT, ItalyDipartimento Matemat & Informat, Viale Andrea Doria 6, I-95125 Catania, CT, Italy
机构:
Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Zheng, X. H.
Wang, R. N.
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Wang, R. N.
Song, L. L.
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Song, L. L.
Dai, Z. X.
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Dai, Z. X.
Wang, X. L.
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
Wang, X. L.
Zeng, Z.
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
机构:
Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Device, Xiangtan 411105, Hunan, Peoples R China
Xiangtan Univ, Dept Phys, Xiangtan 411105, Hunan, Peoples R ChinaXiangtan Univ, Hunan Key Lab Micronano Energy Mat & Device, Xiangtan 411105, Hunan, Peoples R China
Xiao, Huaping
Cao, Wei
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Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Device, Xiangtan 411105, Hunan, Peoples R China
Xiangtan Univ, Dept Phys, Xiangtan 411105, Hunan, Peoples R ChinaXiangtan Univ, Hunan Key Lab Micronano Energy Mat & Device, Xiangtan 411105, Hunan, Peoples R China
Cao, Wei
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Ouyang, Tao
Xu, Xiaoyan
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Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Device, Xiangtan 411105, Hunan, Peoples R China
Xiangtan Univ, Dept Phys, Xiangtan 411105, Hunan, Peoples R ChinaXiangtan Univ, Hunan Key Lab Micronano Energy Mat & Device, Xiangtan 411105, Hunan, Peoples R China
Xu, Xiaoyan
Ding, Yingchun
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Chengdu Univ Informat Technol, Coll Optoelect Technol, Chengdu 610225, Sichuan, Peoples R ChinaXiangtan Univ, Hunan Key Lab Micronano Energy Mat & Device, Xiangtan 411105, Hunan, Peoples R China
Ding, Yingchun
Zhong, Jianxin
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Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Device, Xiangtan 411105, Hunan, Peoples R China
Xiangtan Univ, Dept Phys, Xiangtan 411105, Hunan, Peoples R ChinaXiangtan Univ, Hunan Key Lab Micronano Energy Mat & Device, Xiangtan 411105, Hunan, Peoples R China
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Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
Iowa State Univ, Dept Phys & Astron, Ames, IA 50011 USAUniv Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
Fei, Z.
Goldflam, M. D.
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Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USAUniv Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
Goldflam, M. D.
Wu, J-S.
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Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USAUniv Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
Wu, J-S.
Dai, S.
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Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USAUniv Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
Dai, S.
Wagner, M.
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Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USAUniv Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
Wagner, M.
McLeod, A. S.
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Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USAUniv Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
McLeod, A. S.
Liu, M. K.
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SUNY Stony Brook, Dept Phys, Stony Brook, NY 11790 USAUniv Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
Liu, M. K.
Post, K. W.
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Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USAUniv Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
Post, K. W.
Zhu, S.
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Delft Univ Technol, Dept Precis & Microsyst Engn, NL-2628 CD Delft, NetherlandsUniv Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
Zhu, S.
Janssen, G. C. A. M.
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Delft Univ Technol, Dept Precis & Microsyst Engn, NL-2628 CD Delft, NetherlandsUniv Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
Janssen, G. C. A. M.
Fogler, M. M.
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Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USAUniv Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
Fogler, M. M.
Basov, D. N.
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Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USAUniv Calif San Diego, Dept Phys, La Jolla, CA 92093 USA