In-Plane Saturable Absorption of Graphene on Silicon Waveguides

被引：0
|
作者：
Shi, Zerui [1 ]
Wong, Chi Yan [1 ]
Cheng, Zhenzhou [1 ]
Xu, Ke [1 ]
Tsang, Hon Ki [1 ]
机构：
[1] Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
来源：
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using ultrafast pulses, in-plane saturable absorption in monolayer graphene placed on silicon waveguides is studied. A saturation response is observed at 15.8 pJ pulse energy and absorption decreases by 14.3% at 1.9 nJ pulse energy.
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页数：2
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