High-Sensitivity Regulated Inverter Cascode Transimpedance Amplifier for Near Infrared Spectroscopy

被引：0
|
作者：
Atef, Ahmed [1 ]
Atef, Mohamed [2 ,3 ]
Abbas, Mohamed [2 ,4 ,5 ]
Khaled, Elsayed Esam M. [2 ]
机构：
[1] Sohag Univ, Fac Engn, Dept Elect Engn, Sohag, Egypt
[2] Assiut Univ, Fac Engn, Dept Elect Engn, Assiut, Egypt
[3] Shanghai Jiao Tong Univ, Sch Microelect, Shanghai, Peoples R China
[4] Egypt Japan Univ Sci & Technol, Sch Elect Commun & Comp, Elect & Commun Dept, Alexandria, Egypt
[5] King Saud Univ, Coll Engn, Dept Elect Engn, Riyadh 11451, Saudi Arabia
来源：
2016 FOURTH INTERNATIONAL JAPAN-EGYPT CONFERENCE ON ELECTRONICS, COMMUNICATIONS AND COMPUTERS (JEC-ECC) | 2016年
关键词：
Near Infrared Spectroscopy; Optical Receiver; Transimpedance Amplifier; Inverter Cascode Amplifier; LOW-NOISE;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents a design and a post layout simulation of a high-sensitivity low-power transimpedance amplifier (TIA) for frequency domain near infrared spectroscopy (FD-NIRS). The TIA consumes 340 mu W from a 1.2 V DC supply. This low power is necessary for NIRS device portability. The proposed TIA achieves 104.8 dB Omega transimpedance gain, 50 MHz bandwidth and 15.1 nA(rms) total integrated input noise current for 2 pF off chip photodiode capacitance. The demonstrated TIA is simulated using 130 nm CMOS technology and occupies an area of 0.0012 mm(2). Post amplifier stage is presented to increase the total gain. The complete NIRS optical receiver achieves 119.5 dB Omega gain, 49.2 MHz bandwidth, 15.4 nA(rms) total integrated input noise current and consumes 400 mu W from a 1.2 V DC supply.
引用
收藏
页码：99 / 102
页数：4
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