Modeling and Analysis of SSN in Silicon and Glass Interposers for 3D Systems

被引：0

作者：

Xie, Biancun ^{[1
]}

Swaminathan, Madhavan ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Interconnect & Packaging Ctr, Atlanta, GA 30332 USA

来源：

2012 IEEE 21ST CONFERENCE ON ELECTRICAL PERFORMANCE OF ELECTRONIC PACKAGING AND SYSTEMS | 2012年

关键词：

Power delivery network; through-silicon via (TSV); simultaneous switching noise; coupling effects;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an efficient hybrid modeling approach for power delivery network (PDN) with through-silicon vias (TSVs) for 3D systems is proposed. The proposed approach extends multi-layer finite difference method (M-FDM) to include TSVs by extracting their parasitic behavior using an integral equation based solver. Using the proposed modeling technique the power/signal integrity of PDN with TSVs/through-glass vias (TGVs) in lossy silicon interposer and low loss glass interposer is investigated and compared. The comparison indicates the benefits of using silicon interposer for high speed signaling.

引用

页码：268 / 271

页数：4

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