Etching silicon wafer without hydrofluoric acid

被引：16
|
作者：
Liu, H [1 ]
Wang, ZL
机构：
[1] Shandong Univ, State Key Lab Crystal Med, Jinan 250100, Peoples R China
[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 26期
基金：
美国国家科学基金会; 美国国家航空航天局; 中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2158021
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A one-step hydrofluoric-acid-free hydrothermal-etching technique is demonstrated for the preparation of porous silicon with vertical holes. This method demonstrates a "green" chemical approach for etching a silicon wafer or the preparation of bismuth-silicon nanostructures without toxic acid or applying an external voltage. By controlling the heating temperature (< 180 degrees C) and time, nanoscale vertically holed porous silicon has been created. A formation mechanism has been proposed on the basis of experimental observations. (c) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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