LASER-INDUCED ETCHING OF SILICON IN HYDROFLUORIC-ACID

被引：8
|
作者：
LIM, P
BROCK, JR
TRACHTENBERG, I
机构：
[1] Chemical Engineering Department, University of Texas, Austin
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 04期
关键词：
D O I：
10.1063/1.106644
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Laser-assisted wet etching (LAWE) of n-silicon using a 514.5-nm line from a cw argon-ion laser in the presence of hydrofluoric acid is reported. The effects of laser fluence, doping level, and acid concentration on the etch rate are investigated. By LAWE, vias and lines can be rapidly etched with smooth profiles under conditions described.
引用
收藏
页码：486 / 488
页数：3
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