Large intravalley scattering due to pseudo-magnetic fields in crumpled graphene

被引：19

作者：

Kun, Peter ^{[1
]}

Kukucska, Gergo ^{[2
]}

Dobrik, Gergely ^{[1
]}

Koltai, Janos ^{[2
]}

Kurti, Jeno ^{[2
]}

Biro, Laszlo Peter ^{[1
]}

Tapaszto, Levente ^{[1
]}

Nemes-Incze, Peter ^{[1
]}

机构：

[1] Ctr Energy Res, Inst Tech Phys & Mat Sci, Budapest, Hungary

[2] Eotvos Lorand Univ, Dept Biol Phys, Budapest, Hungary

来源：

NPJ 2D MATERIALS AND APPLICATIONS | 2019年 / 3卷 / 1期

基金：

欧盟地平线“2020”;

关键词：

ELECTRONIC-STRUCTURE; BERRYS PHASE; SPIN; INSULATOR; DISORDER;

D O I：

10.1038/s41699-019-0094-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The pseudo-magnetic field generated by mechanical strain in graphene can have dramatic consequences on the behavior of electrons and holes. Here we show that pseudo-magnetic field fluctuations present in crumpled graphene can induce significant intravalley scattering of charge carriers. We detect this by measuring the confocal Raman spectra of crumpled areas, where we observe an increase of the D'/D peak intensity ratio by up to a factor of 300. We reproduce our observations by numerical calculation of the double resonant Raman spectra and interpret the results as experimental evidence of the phase shift suffered by Dirac charge carriers in the presence of a pseudo-magnetic field. This lifts the restriction on complete intravalley backscattering of Dirac fermions.

引用

页数：7

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