Variable-gain power amplifier for mobile WCDMA applications

被引：19
|
作者：
Vintola, VTS [1 ]
Matilainen, MJ
Kalajo, SJK
Järvinen, EA
机构：
[1] Nokia Mobile Phones, Helsinki 00180, Finland
[2] Nokia Res Ctr, Helsinki 00180, Finland
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2001年 / 49卷 / 12期
关键词：
application-specific integrated circuits; GaAsHBT; gain control; integrated circuit design; linear circuits; microwave integrated circuits; power amplifier;
D O I：
10.1109/22.971637
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A single-chip linear power amplifier (PA) with > 48-dB gain control range and > 24-dBm output power with adjacent channel leakage power below -36 dBc is presented. The chip is realized using an AlGaAs/GaAs heterojunction-bipolar-transistor process and is aimed for 1.95-GHz mobile WCDMA applications. The amplifier consists of two blocks, the variable-gain amplifier, and the PA. The chip size is 1.3 x 1.1 mm(2) and it is mounted on an 8 x 8 mm(2) FR-4 type laminate with 26 pieces of 0402 Surface-mountable discrete components composing a complete 50-Omega input-output amplifier module. This paper presents the design of the two blocks, discusses issues related to their combining, and presents complete amplifier realization and measurement results.
引用
收藏
页码：2464 / 2471
页数：8
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