Transmission X-ray Diffraction from Bismuth Lines Embedded in Silicon

被引:0
|
作者
Tajiri, Hiroo [1 ]
Yashiro, Wataru
Sakata, Osami [1 ]
Sakamoto, Kunihiro
Miki, Kazushi
机构
[1] Japan Synchrotron Radiat Res Inst, Sayo, Hyogo 6795198, Japan
关键词
Bi; Atomic wire; Interface structure; Transmission X-ray diffraction; Synchrotron radiation; Si(001);
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have devoted our efforts toward developing transmission X-ray diffraction (TXD) for surface and interface from the viewpoint of realizing more efficient and precise structural analysis than the conventional surface X-ray diffraction. Here, we investigated bismuth lines embedded in a Si(001) substrate, which are promising templates applicable to nanometer-scale device, by TXD. In our experiments with synchrotron X-rays typical one-dimensional diffraction patterns were observed, which obviously indicates that the bismuth lines are still preserved in interface at the atomic scale.
引用
收藏
页码:619 / 622
页数:4
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