Photoinduced direct electron transfer from InSe to GaSe semiconductor nanoparticles

被引：22
|
作者：
Tu, HH [1 ]
Kelley, DF [1 ]
机构：
[1] Univ Calif Merced, Merced, CA 95344 USA
来源：
NANO LETTERS | 2006年 / 6卷 / 01期
关键词：
D O I：
10.1021/nl051914s
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Direct electron transfer from InSe nanoparticles to GaSe nanoparticles in mixed solution-phase aggregates has been found to occur upon photoexcitation. Mixed aggregates exhibit a strong charge-transfer absorption band at an energy slightly higher than the InSe band gap. Photoexcitation of this band results in a polarized transient absorption spectrum and transient absorption kinetics characteristic of InSe valence-band holes and GaSe conduction-band electrons. The kinetics indicate that charge separation persists for at least several hundred picoseconds.
引用
收藏
页码：116 / 122
页数：7
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