Crystallization of electron beam evaporated a-Si films on textured glass substrates by flash lamp annealing

被引：4

作者：

Kurata, Keisuke ^{[1
]}

Ohdaira, Keisuke ^{[1
]}

机构：

[1] Japan Adv Inst Sci & Technol, Nomi, Ishikawa 9231292, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / SB期

关键词：

POLYCRYSTALLINE SILICON FILMS; AMORPHOUS-SILICON; EXPLOSIVE CRYSTALLIZATION; SOLAR-CELLS; MECHANISMS; VELOCITY;

D O I：

10.7567/1347-4065/aafb51

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the crystallization of amorphous silicon (a-Si) films, by flash lamp annealing (FLA), formed by electron beam (EB) evaporation on textured glass substrates. We confirmed that EB-evaporated a-Si films formed on textured glass can be crystallized by FLA. Optical reflectance on EB-evaporated a-Si can be reduced by using the textured glass, leading to a reduction in the fluence of a FL pulse required for the crystallization. The fluence of a FL pulse for the crystallization of EB-evaporated a-Si films tends to increase with temperature during EB evaporation of a-Si films. The pre-existing crystal grains in precursor Si films may affect the mechanism of their crystallization. The usage of textured glass substrates leads the formation of polycrystalline Si (poly-Si) films with fine grains. This may result from the prevention of lateral thermal growth and the suppression of explosive crystallization (EC). Unlike in the case of the crystallization of EB-evaporated a-Si films on flat glass substrates, poly-Si films formed on textured glass substrates are not cracked. This may be due to the suppression of the emergence of EC. (C) 2019 The Japan Society of Applied Physics

引用

页数：5

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