Defect formation in AlN after irradiation with He2+ ions

The paper presents results of studies on defect formation processes, radiation resistance, amd changes in the conductive and insulating characteristics of AlN ceramics under irradiation with 40 keV He2+ ions. The radiation fluence ranged from 10(15) to 5 x 10(17) ion/cm(2). Using the method of X-ray structural analysis, it has been established that an increase in the irradiation fluence leads to a decrease in intensities of diffraction peaks and a change in lines shape, which indicates an increase in the concentration of distortions and stresses in the crystal structure. The change in concentration of deformation in the structure is due to the increase in the content of introduced helium and the formation of cascades of secondary defects and vacancies. At large fluences of irradiation (above 10(17) ions/cm(2)), diffraction patterns show the formation of a halo characteristic of X-ray amorphous or highly disordered impurity inclusions and the formation of spherical inclusions in the surface layer, the average size of which varies from 50 to 100 nm. The decrease in resistance and thermal conductivity as a result of irradiation and the formation of helium inclusions in the structure indicates a degradation of the structural characteristics, as well as a decrease in radiation resistance, which is caused by a drop in strength characteristics.