Compositional intermixing at CdS/Cu(In,Ga)Se2 rough interface studied by x-ray fluorescence

被引：5
|
作者：
Kim, S [1 ]
Soo, YL
Kioseoglou, G
Kao, YH
Ramanathan, K
Deb, SK
机构：
[1] SUNY Buffalo, Dept Phys, Amherst, NY 14260 USA
[2] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 10期
关键词：
D O I：
10.1063/1.1471388
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of compositional intermixing and high interfacial roughness in a series of CdS/Cu(In,Ga)Se-2 heterojunctions have been investigated using the technique of angular dependence of x-ray fluorescence. In the present case, the average interfacial roughness actually exceeds the nominal thickness of CdS film. A method of data analysis has been worked out to account for the large roughness and this technique allows a possibility of nondestructive determination of the concentration profile of both CdS and Cu(In,Ga)Se-2 as well as the effective roughness parameters in the system. (C) 2002 American Institute of Physics.
引用
收藏
页码：6416 / 6422
页数：7
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