Relative Intensity Noise of an injected semiconductor laser

被引：0

作者：

Poette, J ^{[1
]}

Vaudel, O ^{[1
]}

Besnard, P ^{[1
]}

机构：

[1] CNRS, UMR6082, Lab Optron, FOTON,Ecole Nat Sci Appl & Technol, 6,Rue Kerampont, F-22305 Lannion, France

来源：

INTERNATIONAL CONFERENCE ON LASERS, APPLICATIONS, AND TECHNOLOGIES 2005: ADVANCED LASERS AND SYSTEMS | 2006年 / 6054卷

关键词：

optical injection; semiconductor laser; Relative Intensity Noise; linewidth;

D O I：

10.1117/12.660527

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A study of the Relative Intensity Noise (RIN) of an optically injected semiconductor laser is presented versus the injected power. The seeded laser is then operating from an amplifying regime towards a locking one, at the same wavelength than that of the master one. It is shown that when the Master is more coherent than the slave, a reduction of the RIN of the slave is progressively observed along with an increase of the injected power. In the converse case, no significant modification of the RIN is experimentally observed.

引用

页数：10

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