Improved Inversion Channel Mobility in Si-face 4H-SiC MOSFETs by Phosphorus Incorporation Technique

被引：7

作者：

Okamoto, Dai ^{[1
]}

Yano, Hiroshi ^{[1
]}

Kotake, Shinya ^{[1
]}

Hirata, Kenji ^{[1
]}

Hatayama, Tomoaki ^{[1
]}

Fuyuki, Takashi ^{[1
]}

机构：

[1] Nara Inst Sci & Technol NAIST, Grad Sch Mat Sci, Nara 6300192, Japan

来源：

B - SILICON CARBIDE 2010-MATERIALS, PROCESSING AND DEVICES | 2010年 / 1246卷

关键词：

INTERFACE PROPERTIES; NITRIC-OXIDE; NO; OXIDATION; N2O;

D O I：

10.1557/PROC-1246-B06-06

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose a new technique to fabricate 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with high inversion channel mobility. P atoms were incorporated into the SiO2/4H-SiC(0001) interface by post-oxidation annealing using phosphoryl chloride (POCl3). The interface state density at 0.2 eV from the conduction band edge was reduced to less than 1 x 10(11) cm(-2)eV(-1) by the POCl3 annealing at 1000 degrees C. The peak field-effect mobility of 4H-SiC MOSFETs on (0001) Si-face processed with POCl3 annealing at 1000 degrees C was approximately 90 cm(2)/Vs. The high channel mobility is attributed to the reduced interface state density near the conduction band edge.

引用

页数：5

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