The electrical characteristics of low temperature polycrystalline silicon thin film transistors fabricated on metal foil substrate

被引：0

作者：

Luo, Y. R. ^{[1
]}

Wang, L. T. ^{[1
]}

Wu, J. S. ^{[1
]}

Chen, Y. H. ^{[1
]}

Huang, C. J. ^{[1
]}

Peng, I. H. ^{[1
]}

Wong, T. C. ^{[1
]}

Liu, Y. L. ^{[1
]}

Wang, M. C.

Chang, J. F. ^{[1
]}

Chang, C. M. ^{[1
]}

机构：

[1] Elect Res & Serv Org, Ind Technol Res Inst, Hsinchu 310, Taiwan

来源：

IDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005 | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The PMOS low temperature poly-silicon thin film transistors (LTPS-TFTs) were fabricated on a metal foil substrate. The pulse excimer laser was used to induce the polycrystalline silicon (poly-Si) crystallization and the average grain size of poly-Si is 3500 angstrom. The maximum temperature of LTPS-TFT process is 200 degrees C. The PMOS LTPS-TFTs displayed a field-effect mobility of 27.5cm(2)/Vs, a threshold voltage of -11.5 Volt, a I-on/I-off ratio of 10(6) and the leakage current through gate insulator of 3 x 10(-12) Amp.

引用

页码：428 / 429

页数：2

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