The electrical characteristics of low temperature polycrystalline silicon thin film transistors fabricated on metal foil substrate

被引：0
|
作者：
Luo, Y. R. [1 ]
Wang, L. T. [1 ]
Wu, J. S. [1 ]
Chen, Y. H. [1 ]
Huang, C. J. [1 ]
Peng, I. H. [1 ]
Wong, T. C. [1 ]
Liu, Y. L. [1 ]
Wang, M. C.
Chang, J. F. [1 ]
Chang, C. M. [1 ]
机构：
[1] Elect Res & Serv Org, Ind Technol Res Inst, Hsinchu 310, Taiwan
来源：
IDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005 | 2005年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The PMOS low temperature poly-silicon thin film transistors (LTPS-TFTs) were fabricated on a metal foil substrate. The pulse excimer laser was used to induce the polycrystalline silicon (poly-Si) crystallization and the average grain size of poly-Si is 3500 angstrom. The maximum temperature of LTPS-TFT process is 200 degrees C. The PMOS LTPS-TFTs displayed a field-effect mobility of 27.5cm(2)/Vs, a threshold voltage of -11.5 Volt, a I-on/I-off ratio of 10(6) and the leakage current through gate insulator of 3 x 10(-12) Amp.
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页码：428 / 429
页数：2
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