Electrical properties of GaAs photonic crystal cavity lateral p-i-n diodes

被引：4

作者：

Petykiewicz, Jan ^{[1
]}

Shambat, Gary ^{[1
]}

Ellis, Bryan ^{[1
]}

Vuckovic, Jelena ^{[1
]}

机构：

[1] Stanford Univ, EL Ginzton Lab, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 01期

关键词：

NANOCAVITY LASER; TEMPERATURE; MOBILITIES; SILICON;

D O I：

10.1063/1.4732782

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate conduction and free-carrier injection in laterally doped GaAs p-i-n diodes formed in one and two-dimensional photonic crystal (PC) nanocavities. Finite element simulations show that the lateral geometry exhibits high conductivity for a wide range of PC parameters and allows for precise control over current flow, enabling efficient carrier injection despite fast surface recombination. Thermal simulations indicate that the temperature increase during steady-state operation is only 3.3 K in nanobeams and 0.29 K in L3 defect nanocavities. The results affirm the suitability of lateral doping in PC devices and indicate criteria for further design optimization. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4732782]

引用

页数：5

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