Ultrashallow profiling using secondary ion mass spectrometry: Estimating junction depth error using mathematical deconvolution

被引：14
|
作者：
Yang, MH [1 ]
Mount, G [1 ]
Mowat, I [1 ]
机构：
[1] Evans Analyt Grp, Sunnyvale, CA 94086 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 01期
关键词：
D O I：
10.1116/1.2132319
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
As implant energies get lower and lower, significant errors can be present in junction depth measurements in secondary ion mass spectrometry (SIMS) ultrashallow depth profiling. Primary beam ion mixing is one of the main sources of errors leading to overestimation of junction depths in SIMS measurements. In this article, we systematically study the correlations between the implant profile trailing edge, junction depth and primary ion beam energy for low energy boron and arsenic implants. Using a mathematical deconvolution model proposed by Yang and Odom [Mater. Res. Soc. Symp. Proc. 669, J4.16.1 (2001)], we are able to estimate the error of the junction depth and consistently improve the accuracy of junction depth measurements using SIMS. (c) 2006 American Vacuum Society.
引用
收藏
页码：428 / 432
页数：5
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