Microstructural characterisation of Bi2Se3 thin films

被引：5

作者：

Tarakina, N. V. ^{[1
]}

Schreyeck, S. ^{[1
]}

Borzenko, T. ^{[1
]}

Grauer, S. ^{[1
]}

Schumacher, C. ^{[1
]}

Karczewski, G. ^{[1
]}

Gould, C. ^{[1
]}

Brunner, K. ^{[1
]}

Buhmann, H. ^{[1
]}

Molenkamp, L. W. ^{[1
]}

机构：

[1] Univ Wurzburg, Phys Inst, D-97074 Wurzburg, Germany

来源：

18TH MICROSCOPY OF SEMICONDUCTING MATERIALS CONFERENCE (MSM XVIII) | 2013年 / 471卷

关键词：

GROWTH;

D O I：

10.1088/1742-6596/471/1/012043

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The microstructure of Bi2Se3 thin films grown by molecular beam epitaxy on Si(111), InP(111)B and Fe-doped InP(111)B substrates has been studied in detail using scanning transmission electron microscopy. Films grown on Si(111) and InP(111)B substrates show the formation of twin domains: rotation twins (with the grain boundary perpendicular to the substrate) and lamellar twins (with the grain boundary parallel to the substrate). The presence of twins was confirmed by atomic-force microscopy (AFM) and X-ray diffraction (XRD). At the interface between Bi2Se3 film and Si(111) or InP(111)B substrates poorly crystallized layers of about 1 nm and 1.8 nm thickness, respectively, followed by well-crystallized Bi2Se3 layers, were found. The use of a Fe-doped InP (111) substrate with a rough surface enables the suppression of twin formation.

引用

页数：4

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