Process Development for 3D Integration: Conductive wafer bonding for high density inter-chip interconnection

被引：0
|
作者：
Song, Chongshen [1 ,2 ]
Zhang, Wenqi [1 ]
Shangguan, Dongkai [1 ,2 ]
机构：
[1] Natl Ctr Adv Packaging, Wuxi 214135, Jiangsu, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
来源：
2014 4TH IEEE INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) | 2014年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper discusses the application of conductive wafer bonding, especially wafer level hybrid Cu-Cu bonding, for realizing high density inter-chip interconnection. 3D integration process using conductive wafer bonding and the test vehicle for bonding process evaluation are described. Different pre-bonding surface treatment methods and bonding procedures are studied and compared for yield and throughput optimization.
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页码：4 / 4
页数：1
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