Synthesis of tin oxide films by dual ion beam sputtering using Sn target and oxygen ion beam

被引:9
|
作者
Choe, YS
Chung, JH
Kim, DS
Baik, HK
机构
[1] Yonsei Univ, Dept Engn Met, Seodaemun Ku, Seoul 120749, South Korea
[2] TYM R&D Ctr, Mat Res Lab, Yongin 449870, Kyunggi Do, South Korea
来源
SURFACE & COATINGS TECHNOLOGY | 1999年 / 112卷 / 1-3期
关键词
dual ion beam sputtering; oxygen ion-beam; SnO2; tin target;
D O I
10.1016/S0257-8972(98)00759-2
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The properties of tin oxide films deposited at room temperature by dual ion beam sputtering (DIBS) using Sn targets and oxygen ion-beam have been examined as a function of oxygen ion energy. Studies by X-ray diffraction (XRD) showed that, with increasing oxygen ion-beam energy, the amorphous microstructure transformed into a crystalline SnO2 phase and the preferred orientations varied from (211), (101) to (002) on Si(100). Together with X-ray photoelectron spectroscopy (XPS), the Rutherford back-scattering (RBS) analyses revealed that, with an increase of oxygen ion-beam energy, the oxygen content and the packing density of the films increased slightly up to a value close to the stoichiometry of SnO2. These results indicate that crystalline SnO2 films can be synthesized at room temperature using DIBS with Sn target and oxygen ion-beam and also that the energetic oxygen ion-beams affect the phase formation, crystalline structure and the preferred orientation of the films. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:267 / 270
页数:4
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