New Technical Parameters and Operational Improvements of the Metal Oxide Varistors Manufacturing Process

被引:11
|
作者
Frigura-Iliasa, Flaviu Mihai [1 ,2 ]
Musuroi, Sorin [3 ,4 ]
Sorandaru, Ciprian [3 ]
Vatau, Doru [1 ]
机构
[1] POLITEHN Univ Timisoara, Fac Elect & Power Engn, Power Syst Dept, Timisoara 300006, Romania
[2] Natl Inst Res & Dev Electrochem & Condensed Matte, Timisoara 300054, Romania
[3] POLITEHN Univ Timisoara, Fac Elect & Power Engn, Elect Engn Dept, Timisoara 300006, Romania
[4] Romanian Acad Scientists, Timisoara Branch, Timisoara 300223, Romania
来源
PROCESSES | 2019年 / 7卷 / 01期
关键词
Metal Oxide Varistors; manufacturing process; composition; sintering temperature; sintering pressure; TEMPERATURE; ARRESTER;
D O I
10.3390/pr7010018
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
At the beginning, this article details the manufacturing procedures for varistor materials. Starting from the initial composition of two large series of varistors (those with two additive oxides and those with five additive oxides), there is a major overview of the main stages of the technological process and the equipment used for the production, emphasizing the technological changes that were made. The article continues with the study of the influence of the sintering pressure and the sintering temperature on the electrical properties of the varistor materials made before. There were two experimental series of 7 varistors, one series based on 2 additive oxides and one based on 5 additive oxides. Each varistor of these series was sintered at another temperature, the fundamental purpose being to determine an optimal sintering temperature for each chemical composition. A second activity consisted of manufacturing two more series of varistors with the same chemical composition (2 oxides and 5 additive oxides), which were sintered at two different pressures, for having a set of conclusions on the influence of sintering pressure on the electric performances. All conclusions are underlying a new process for manufacturing metal oxide based varistors.
引用
收藏
页数:19
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