High Pressures Water Vapor Annealing for Atomic-Layer-Deposited Al2O3 on GaN

被引：0
|
作者：
Yoshitugu, Koji [1 ]
Horita, Masahiro [1 ]
Uenuma, Mustunori [1 ]
Ishikawa, Yasuaki [1 ]
Uraoka, Yukiharu [1 ]
机构：
[1] Nara Inst Sci & Technol, Ikoma, Nara, Japan
来源：
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | 2016年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页数：1
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