Performance and stability of large-area 4H-SiC 10-kV junction barrier Schottky rectifiers

The forward and reverse bias dc characteristics, the long-term stability under forward and reverse bias, and the reverse recovery performance of 4H-SiC junction barrier Schottky (JBS) diodes that are capable of blocking in excess of 10 kV with forward conduction of up to 10 A at a forward voltage of less than 3.5 V (at 25 degrees C are described. The diodes show a positive temperature coefficient of resistance and a stable Schottky barrier height of up to 200 degrees C. The diodes show stable operation under continuous forward current injection at 20 A/cM2 and under continuous reverse bias of 8 kV at 125 degrees C. When switched from a 10-A forward current to a blocking voltage of 3 kV at a current rate-of-fall of 30 A/fLs, the reverse recovery time and the reverse recovery charge are nearly constant at 300 ns and 425 nC, respectively, over the entire temperature range of 25 degrees C-175 degrees C.