Low-voltage, high speed, compact silicon modulator for BPSK modulation

被引：42

作者：

Li, Tiantian ^{[1
]}

Zhang, Junlong ^{[1
]}

Yi, Huaxiang ^{[1
]}

Tan, Wei ^{[1
]}

Long, Qifeng ^{[1
]}

Zhou, Zhiping ^{[1
]}

Wang, Xingjun ^{[1
]}

Wu, Hequan ^{[1
]}

机构：

[1] Peking Univ, Sch Elect Engn & Comp Sci, State Key Lab Adv Opt Commun Syst & Networks, Beijing 100871, Peoples R China

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 20期

基金：

国家高技术研究发展计划(863计划); 中国国家自然科学基金;

关键词：

MACH-ZEHNDER MODULATOR; OPTICAL MODULATOR; TRANSMISSION; PERFORMANCE; FORMATS;

D O I：

10.1364/OE.21.023410

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A low voltage, high speed, compact silicon Mach-Zehnder Interferometer (MZI) modulator for Binary Phase Shift Keying (BPSK) modulation has been demonstrated. High modulation efficiency, V pi L pi equals to 0.45V.cm, was obtained in a 1mm length device owing to a higher doping concentration and low-loss traveling-wave electrode. 25Gb/s non-return-to-zero(NRZ)-BPSK with 6V(pp) RF driving signal was achieved. Driven by a very low 3V(pp) RF signal, the 10Gb/s NRZ-BPSK was also realized benefiting from the high modulation efficiency and the low-voltage driving scheme. The power consumption for the BPSK modulation was as low as 0.118W. These results prove that the silicon modulator is suitable for advanced communication system with low power consumption. (C) 2013 Optical Society of America

引用

页码：23410 / 23415

页数：6

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