Effects of Al ion implantation on 3C-SiC crystal structure

被引：0
|
作者：
Severino, Andrea [1 ,2 ]
Piluso, Nicolo [1 ,2 ]
Marino, Antonio [2 ]
La Via, Francesco [2 ]
机构：
[1] ETC Srl, Epitaxial Technol Ctr, 16 Str,Blocco Torre Allegra, I-95121 Catania, Italy
[2] CNR IMM, I-95121 Catania, Italy
来源：
SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷
关键词：
3C-SiC heteroepitaxy; Al+ ion implantation; Raman spectroscopy; X-Ray Diffraction; FILMS;
D O I：
10.4028/www.scientific.net/MSF.740-742.613
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
In this study, a 6 inch 3C-SiC wafer has been grown and processed to realize an Al+-implanted layer underneath the film surface. The structural damaging has been carefully analyzed by X-Ray Diffraction (XRD) and micro-Raman spectroscopy. Raman analysis on a grazing angle polished film, after the implantation process, has been conducted and a spectral region (between 825 and 925 cm(-1)) has been identified as an interesting footprint of the crystal damaging. Thermal treatments on implanted samples at doses as low as 4x10(14) cm(-2) have shown a capability of the 3C-SiC crystal structure to recover from damaging. Reciprocal space mapping on (004) 3C-SiC lattice points suggests a total recovery at an annealing temperature of 1350 degrees C.
引用
收藏
页码：613 / +
页数：2
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