PAC studies of implanted 111Ag in single-crystalline ZnO

被引:5
|
作者
Rita, E
Correia, JG
Wahl, U
Alves, E
Lopes, AML
Soares, JC
机构
[1] CERN, PH, CH-1211 Geneva 23, Switzerland
[2] Inst Tecnol & Nucl, Sacavem, Portugal
[3] Univ Lisbon, Ctr Fis Nucl, P-1699 Lisbon, Portugal
[4] Univ Aveiro, Dept Fis, P-3800 Aveiro, Portugal
来源
HYPERFINE INTERACTIONS | 2004年 / 158卷 / 1-4期
关键词
Ag; defects; PAC; ZnO;
D O I
10.1007/s10751-005-9065-8
中图分类号
O64 [物理化学(理论化学)、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号
070203 ; 070304 ; 081704 ; 1406 ;
摘要
The local environment of implanted Ag-111 (t(1/2)=7.45 d) in single-crystalline [0001] ZnO was evaluated by means of the perturbed angular correlation (PAC) technique. Following the 60 keV low dose (1x10(13) cm(-2)) Ag-111 implantation, the PAC measurements were performed for the as-implanted state and following 30 min air annealing steps, at temperatures ranging from 200 to 1050 degrees C. The results revealed that 42% of the probes are located at defect-free S-Zn sites (nu(Q)similar to 32 MHz, eta=0) in the as-implanted state and that this fraction did not significantly change with annealing. Moreover, a progressive lattice recovery in the near vicinity of the probes was observed. Different EFGs assigned to point defects were Furthermore measured and a general modification of their parameters occurred after 600 degrees C. The 900 degrees C annealing induced the loss of 30% of the Ag-111 atoms, 7% of which were located in regions of high defects concentration.
引用
收藏
页码:395 / 400
页数:6
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