Ion projection lithography:: Advances with integrated tool and resist processes

被引:1
|
作者
Wolter, A [1 ]
Käsmaier, R [1 ]
Löschner, H [1 ]
机构
[1] Infineon Technol AG, D-81609 Munich, Germany
来源
关键词
next generation lithography; ion projection lithography; vacuum wafer stage; resist process;
D O I
10.1117/12.436672
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ion Projection Lithography (IPL) uses electrostatic ion-optics, for reduction printing of stencil mask patterns to wafer substrates. Key advantages of the technology are the high, non diffraction limited resolution, the great depth of focus associated with the very low numerical aperture, the stabilization of the image with pattern lock techniques and the fine tuning of the ion-optical system with multipole electrodes which allows for comparatively high mechanical tolerances of the tool. To demonstrate, that IPL will be able to meet the requirements for industrial production a Process Development Tool has been designed, integrated and put into operation. Currently the adjustable ion optics is being optimized for full resolution and current. A waferstage designed for later integration into the PDT has been successfully tested at ambient air in a separate test bench system. A resist process and! the stencil masks necessary for the ion optical experiments are available: Several chemically amplified resists have been tested under ion exposure and showed good sensitivity, contrast and dose latitude. Masks designed for resolution and overlays experiments have been manufactured.
引用
收藏
页码:453 / 459
页数:7
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