Theoretical analysis of the threshold current density in BeMgZnSe quantum-well ultraviolet lasers

被引：7
|
作者：
Maruyama, T [1 ]
Nakamura, N [1 ]
Watanabe, M [1 ]
机构：
[1] Tokyo Inst Technol, Dept Informat Proc, Mizuho Ku, Yokohama, Kanagawa 2268502, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 12期
关键词：
Be-chalcogenide; quantum-well laser; ultraviolet laser; wide-bandgap materials; threshold current density;
D O I：
10.1143/JJAP.40.6872
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A II-VI semiconductor laser using Be-chalcogenide semiconductor material which is lattice-matched to silicon was proposed and its threshold current density vas estimated based on the density-matrix theory. The threshold current density was calculated to be below 1 kA/cm(2) in a single quantum-well (QW) less than 7 nm thick.
引用
收藏
页码：6872 / 6873
页数：2
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