Transparent boron-doped carbon nanotube films

被引：56
|
作者：
Liu, X. M. [1 ]
Romero, H. E. [1 ]
Gutierrez, H. R. [1 ]
Adu, K. [1 ]
Eklund, P. C. [1 ,2 ]
机构：
[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[2] Penn State Univ, Dept Mat Sci, University Pk, PA 16802 USA
来源：
NANO LETTERS | 2008年 / 8卷 / 09期
关键词：
D O I：
10.1021/nl0729734
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We report results of studies on the sheet resistance and optical transmission of thin films of boron-doped single-walled carbon nanotubes (SWNTs). Boron doping was carried out by exposure of SWNTs to B2O3 and NH3 at 900 degrees C and 1-3 atom % boron was found in the SWNT bundles via electron energy loss spectroscopy (EELS). Boron doping was found to downshift the positions of the optical absorption bands associated with the van Hove singularities (E(11)s E(22)s and E(11)m) by similar to 30 meV relative to their positions in acid-treated and annealed SWNTs. Raman spectroscopy, EELS, and optical data are consistent with the picture that a few atom % boron has been substituted for carbon in the sp(2) framework of SWNTs. Finally, our results show that boron doping does not significantly affect the optical transmittance in the visible region. However, boron doping lowers the sheet resistance by similar to 30% relative to pristine SWNT films from the same batch. Boron-doped SWNT may provide a better approach to touch-screen technology.
引用
收藏
页码：2613 / 2619
页数：7
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