Fine-patterning of sol-gel derived PZT film by a novel lift-off process using solution-processed metal oxide as a sacrificial layer

Sub-5 mu m pattern of sol-gel derived lead-zirconium-titanate (PZT) film with a thickness of 80-390 nm was successfully prepared on Pt(111)/TiOx/SiO2/Si (100) substrate by a novel lift-off process using solution processed metal oxides as a sacrificial layer. The process is simply divided into three steps: In-Zn-O (IZO) sacrificial layer spin-coating and patterning, PZT film formation followed by lift-off process. The results suggested that the IZO layer is effective in preventing PZT crystallization because of its thermal stability during PZT post-annealing, and its barrier-effects between the spin-coated PZT precursor and the Pt/TiOx substrate. Consequently, the micro-pattern of lift-off PZT exhibited better properties than that formed by wet-etching. In particular, the lift-off PZT films possessed better ferroelectric properties, higher break-down voltage, and more well-defined shape than those of films patterned by conventional wet-etching. This lift-off process shows great promise for highly integrated devices due to its fine pattern-ability.