Deposition and properties of spin on Pb5Ge3O11 ferroelectric thin film

This paper will discuss the spin on deposition of Pb5Ge3O11 (PGO) on Ir and ZrO2 substrates for MFMIS and MFIS FeRAM applications. The precursors used are lead acetate trihydrate and germanium isopropoxide in di (ethylene glycol) ethyl ether. After optimizing the deposition conditions of spin speed, baking condition and annealing condition, single phase c-axis PGO has been obtained on both Ir and ZrO2 substrates. The film deposited on Ir substrate shows extremely smooth surface and very well saturated square shape hysteresis loop. The 2Pr is about 6similar to8 muC/cm(2), dielectric constant is about 50similar to100, and the leakage current is about 3x10(-6) A/cm(2) at 100 kV/cm for 100-120nm thickness PGO thin film. The PGO thin film deposited on ZrO2 is also very uniform. About 0.7V memory window observed for 180nm PGO thin film with 13nm ZrO2 high-k gate dielectric at 2V sweep voltage. The leakage current is about 2.5x10(-7) A/cm(2) at 100 kV/cm.