A dual band SiGe MMIC LNA and mixer with ground shield for WCDMA and CDMA applications

被引：0
|
作者：
Kim, YG [1 ]
Yoon, SY [1 ]
Kim, H [1 ]
Yoo, SH [1 ]
Kim, YG [1 ]
Baek, KS [1 ]
Kim, CW [1 ]
Cho, DH [1 ]
Han, TH [1 ]
Ryum, BR [1 ]
机构：
[1] Anyang Univ, Manan Gu, Anyang City 430714, Kyungki Do, South Korea
来源：
RAWCON 2001: IEEE RADIO AND WIRELESS CONFERENCE, PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/RAWCON.2001.947496
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
A single chip 2.7V dual band SiGe RF front end for 2140MHz WCDMA and 882MHz CDMA operation has been implemented by a standard SiGe bipolar process with an f(max) of 50GHz utilizing a ground shield layer structure upon low resistive silicon substrate, The LNAs are gain controllable single stage amplifiers with high linear characteristics. The mixer circuits are double balanced Gilbert type micro-mixers with differential IF buffer amplifiers.
引用
收藏
页码：41 / 44
页数：4
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